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濕法刻蝕相對於等離子刻蝕的缺點Disadvantages of wet etching compared with plasma etching

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濕法刻蝕相對於等離子刻蝕的缺點Disadvantages of wet etching compared with plasma etching

發布日期:2018-01-03 作者:www.tonertimes.com 點擊:

等離子刻蝕機,又叫等離子蝕刻機、等離子平麵刻蝕機、等離子體刻蝕機、等離子表麵處理儀、等離子清洗係統等。等離子刻蝕,是幹法刻蝕中Z常見的一種形式,其原理是暴露在電子區域的氣體形成等離子體,由此產生的電離氣體和釋放高能電子組成的氣體,從而形成了等離子或離子,電離氣體原子通過電場加速時,會釋放足夠的力量與表麵驅逐力緊緊粘合材料或蝕刻表麵。某種程度來講,等離子清洗實質上是等離子體刻蝕的一種較輕微的情況。進行幹式蝕刻工藝的設備包括反應室、電源、真空部分。工件送入被真空泵抽空的反應室。氣體被導入並與等離子體進行交換。等離子體在工件表麵發生反應,反應的揮發性副產物被真空泵抽走。等離子體刻蝕工藝實際上便是一種反應性等離子工藝。近期的發展是在反應室的內部安裝成擱架形式,這種設計的是富有彈性的,用戶可以移去架子來配置合適的等離子體的蝕刻方法:反應性等離子體(RIE),順流等離子體(downstream),直接等離子體(direction plasma)。

等離子刻蝕機

1. 矽片水平運行,機片高(等離子刻蝕去PSG槽式浸泡甩幹,矽片受衝擊小);


2. 下料吸筆易汙染矽片(等離子刻蝕去PSG後甩幹);


3. 傳動滾抽易變形(PVDF,PP材質且水平放置易變形);


4. 成本高(化學品刻蝕代替等離子刻蝕成本增加)。


此外,有些等離子刻蝕機,如SCE等離子刻蝕機還具備"綠色"優勢:無氟氯化碳和汙水、操作和環境安全、排除有毒和腐蝕性的液體。SCE等離子刻蝕機支持以下四種平麵等離子體處理模式:


直接模式--基片可以直接放置在電極托架或是底座托架上,以獲得Z大的平麵刻蝕效果。

各向同性刻蝕與非各向同性刻蝕

各向同性刻蝕與非各向同性刻蝕


定向模式--需要非等向性刻蝕(anisotropic etching)的基片可以放置在特製的平麵托架上。


下遊模式--基片可以放置在不帶電托架上,以便取得微小的等離子體效果。


定製模式--當平麵刻蝕配置不過理想時,特製的電極配置可以提供。

Plasma etcher, also known as plasma etcher, plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc. Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electronic region forms plasma, which produces ionized gas and releases gas composed of high-energy electrons, thus forming plasma or ion. When the ionized gas atom accelerates through the electric field, it will release enough force to tightly bond the material or etching surface with the surface expulsion force. To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching is actually a reactive plasma process. The recent development is to install the reaction chamber in the form of a shelf. This kind of design is elastic. Users can remove the shelf to configure the appropriate etching methods of plasma: reactive plasma (RIE), downstream plasma (downstream), direct plasmon (direction plasma). 

  1. Horizontal operation of silicon wafer, high machine chip (plasma etching to PSG bath soaking and drying, small impact on silicon wafer);

  2. Cutting pen easy to contaminate silicon wafer (plasma etching to PSG after drying);

  3. Transmission roll extraction easy to deform (PVDF, PP material and horizontal placement easy to deform);

   4. High cost (chemical etching to replace plasma etching cost increases). 

       In addition, some plasma etchers, such as SCE plasma etchers, also have "green" advantages: no CFC and sewage, safe operation and environment, toxic and corrosive liquids are eliminated. SCE plasma etcher supports the following four plane plasma processing modes: 

direct mode - the substrate can be directly placed on the electrode bracket or the base bracket to obtain the maximum plane etching effect. 

Isotropic etching and non-isotropic etching 

Otropic etching and non-isotropic etching 

Orientation mode -- substrate requiring anisotropic etching can be placed on a special plane bracket.

Downstream mode - the substrate can be placed on an uncharged bracket to achieve tiny plasma effects. 

Custom mode - when the planar etching configuration is not ideal, a special electrode configuration can be provided.

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相關標簽:等離子刻蝕機

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