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你知道等離子去膠機的原理?Do you know the principle of plasma degummer?

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你知道等離子去膠機的原理?Do you know the principle of plasma degummer?

發布日期:2018-01-03 作者:www.tonertimes.com 點擊:

等離子去膠法,去膠氣體為氧氣。其工作原理是將矽片置於真空反應係統中,通入少量氧氣,加1500 V高壓,由高頻信號發生器產生高頻信號,使石英管內形成強的電磁場,使氧氣電離,形成氧離子、活化的氧原子、氧分子和電子等混合物的等離子體的輝光柱。活化氧(活潑的原子態氧)可以迅速地將聚酰亞胺膜氧化成為可揮發性氣體,被機械泵抽走,這樣就把矽片上的聚酰亞胺膜去除了。等離子去膠的優點是去膠操作簡單、去膠效率高、表麵幹淨光潔、無劃痕、成本低、環保

去膠機

電介質等離子刻蝕機設備一般使用電容耦合等離子體平行板反應器。在平行電極反應器中,反應離子刻蝕腔體采用了陰極麵積小,陽極麵積大的不對稱設計,被刻蝕物是被置於麵積較小的電極上。在射頻電源所產生的熱運動作用下帶負電的自由電子因質量小、運動速度快,很快到達陰極;而正離子則由於質量大,速度慢不能在相同的時間內到達陰極, 從而使陰極附近形成了帶負電的鞘層。正離子在鞘層的加速下,垂直轟擊矽片表麵,加快表麵的化學反應及反應生成物的脫離,導致很高的刻蝕速率。離子轟擊也使各向異性刻蝕得以實現等離子體去膠的原理和等離子體刻蝕的原理是一致的。不同的是反應氣體的種類和等離子體的激發方式。

      Plasma degumming, degumming gas is oxygen. Its working principle is to put the silicon wafer in the vacuum reaction system, introduce a small amount of oxygen, and add 1500 V high pressure. The high frequency signal is generated by the high frequency signal generator, which forms a strong electromagnetic field in the quartz tube, ionizes the oxygen, and forms the glow column of the plasma of oxygen ion, activated oxygen atom, oxygen molecule and electron mixture. Activated oxygen (active atomic oxygen) can quickly oxidize the polyimide film into volatile gas, which is pumped away by a mechanical pump, thus removing the polyimide film from the silicon wafer. The advantages of plasma degumming are simple operation, high degumming efficiency, clean and clean surface, no scratch, low cost, environmental protection dielectric plasma etcher equipment generally uses the parallel plate reactor of capacitance coupled plasma. 

     In the parallel electrode reactor, the reactive ion etching chamber adopts the asymmetric design with small cathode area and large anode area, and the etched object is placed on the electrode with small area. Under the action of the thermal motion produced by the RF power supply, the negative free electrons can reach the cathode quickly because of their small mass and fast moving speed, while the positive ions can not reach the cathode in the same time because of their large mass and slow speed, thus forming a negative sheath near the cathode. Under the acceleration of sheath, positive ions bombard the surface of silicon wafer vertically, which accelerates the chemical reaction and the separation of reaction products, resulting in high etching rate. The principle of plasma debonding is consistent with that of plasma etching. The difference is the type of reaction gas and the excitation mode of plasma.

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相關標簽:等離子刻蝕機

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