Name: Suzhou cycas Microelectronics Co., Ltd.
Address: 1st floor,B06 building,No.2,Fuxing Road,Zhangjiagang Economic Development Zone,Jiangsu Province 215600PRC
近期的發展是在反應室的內部安裝成擱架形式，這種設計的是富有彈性的，用戶可以移去架子來配置合適的等到離子體的蝕刻方法：反應性等離子體（RIE），順流等離子體（downstream），直接等離子體（direction plasma）。 所謂直接等離子體，亦稱作反應離子蝕刻，是等離子的一種直接浸蝕形式。它的主要優勢是高的蝕刻率和高的均勻性。直接等離子體具有較低浸蝕但工件卻暴露在射線區。順流等離子是種較弱的工藝，它適合去除厚為10-50埃的薄層。在射線區或等離子中，人們擔心工件受到損壞，目前，這種擔心還沒有證據，看來隻有在重複的高射線區和延長處理時間到60-120分鍾才可能發生，正常情況下，這樣的條件隻在大的薄片及不是短時的清洗中。
To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching process is actually a reactive plasma process.
The recent development is to install the reaction chamber in the form of a shelf. This kind of design is elastic. Users can remove the shelf to configure appropriate etching methods until the ionomer: reactive plasma (RIE), downstream plasma (downstream), direct plasma (direction plasma). The so-called direct plasma, also known as reactive ion etching, is a direct form of plasma etching. Its main advantages are high etching rate and high uniformity. The direct plasma has low etching but the workpiece is exposed to the radiation region. The downstream plasma is a weak process, which is suitable for removing the thin layer with thickness of 10-50 a. In the radiation area or plasma, people are worried about the damage of the workpiece. At present, there is no evidence for this concern. It seems that it can only happen in the repeated high-ray area and extended processing time to 60-120 minutes. Under normal circumstances, such conditions are only in large flakes and not in short-term cleaning.