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How to improve the utilization rate is the key point of vacuum magnetron sputtering coating industry如何提高利用率是真空磁控濺射鍍膜行業的重點

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How to improve the utilization rate is the key point of vacuum magnetron sputtering coating industry如何提高利用率是真空磁控濺射鍍膜行業的重點

發布日期:2019-08-31 作者:www.tonertimes.com 點擊:

磁控濺射靶材的利用率可成為磁控濺射源的工程設計和生產工藝成本核算的一個參數。截止2012年,還沒有見到對磁控濺射靶材利用率專門或係統研究的報道,而從理論上對磁控濺射靶材利用率近似計算的探討具有實際意義。對於靜態直冷矩形平麵靶,即靶材與磁體之間無相對運動且靶材直接與冷卻水接觸的靶, 靶材利用率( Z大值) 數據多在20%~30%左右(間冷靶相對要高一些,但其被刻蝕過程與直冷靶相同,不作專門討論),且多為估計值。為了提高靶材利用率,研究出來了不同形式的動態靶,其中以旋轉磁場圓柱靶Z著名且在工業上被廣泛應用,據稱這種靶材的利用率Z高可超過70%,但缺少足夠數據或理論證明。常見的磁控濺射靶材從幾何形狀上看有三種類型:矩形平麵、圓形平麵和圓柱管

磁控濺射台

如何提高利用率是真空磁控濺射鍍膜行業的重點,圓柱管靶利用高,但在有些產業是不適用。

磁控濺射台利用外加磁場捕捉電子,延長和束縛電子的運動路徑,搞高離化率,增加鍍膜速率。

1)濺射粒子(主要是原子,還有少量離子等)的平均能量達幾個電子伏,比蒸發粒子的平均動能kT高得多(3000K蒸發時平均動能僅0.26eV),濺射粒子的角分布與入射離子的方向有關。(2)入射離子能量增大(在幾千電子伏範圍內),濺射率(濺射出來的粒子數與入射離子數之比)增大。入射離子能量再增大,濺射率達到極值;能量增大到幾萬電子伏,離子注入效應增強,濺射率下降。(3)入射離子質量增大,濺射率增大。(4)入射離子方向與靶麵法線方向的夾角增大,濺射率增大(傾斜入射比垂直入射時濺射率大)。(5)單晶靶由於焦距碰撞(級聯過程中傳遞的動量愈來愈接近原子列方向),在密排方向上發生優先濺射。(6)不同靶材的濺射率很不相同。

                 How to improve the utilization rate is the key point of vacuum magnetron sputtering coating industry

      The utilization ratio of magnetron sputtering target can be a parameter of engineering design and production cost accounting of magnetron sputtering source. Up to 2012, no special or systematic study on the utilization rate of magnetron sputtering target has been reported, but the theoretical study on the approximate calculation of the utilization rate of magnetron sputtering target has practical significance. For the static straight cold rectangular plane target, i.e. the target has no relative movement between the target and the magnet and the target is in direct contact with the cooling water, the target utilization (maximum value) data are mostly about 20% ~ 30% (the intercooled target is relatively higher, but its etching process is the same as that of the straight cold target, which is not specially discussed), and most of them are estimated values. In order to improve the target utilization, different forms of dynamic targets have been developed, among which the rotating magnetic field cylinder target is the most famous and widely used in industry. It is said that the highest utilization rate of this target can exceed 70%, but there is lack of sufficient data or theoretical proof. There are three types of common magnetron sputtering target materials in terms of geometry: rectangular plane, circular plane

      and how to improve the utilization ratio of cylindrical tube are the key points of the vacuum magnetron sputtering coating industry. The utilization of cylindrical tube target is high, but it is not applicable in some industries.

      The magnetron sputtering platform uses an external magnetic field to capture electrons, extend and bind the motion path of electrons, increase the ionization rate and coating rate. 

      1) The average energy of sputtered particles (mainly atoms, a small amount of ions, etc.) is several electron volts, much higher than the average kinetic energy KT of evaporated particles (the average kinetic energy of 3000K evaporation is only 0.26ev). The angular distribution of sputtered particles is related to the direction of incident ions. (2) The sputtering rate (the ratio of the number of sputtering particles to the number of incident ions) increases with the increase of incident ion energy (in the range of several thousand electron volts). When the energy of incident ion increases again, the sputtering rate reaches the extreme value; when the energy increases to tens of thousands of electron volts, the ion implantation effect increases and the sputtering rate decreases. (3) The sputtering rate increases with the increase of the incident ion mass. (4) The angle between the direction of the incident ion and the normal direction of the target surface increases, and the sputtering rate increases (the sputtering rate of oblique incidence is larger than that of vertical incidence). (5) Due to the focal length collision (the momentum transferred in the cascade process is more and more close to the atomic array direction), the sputtering takes place preferentially in the dense array direction. (6) The sputtering rate of different targets is very different.

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