Name: Suzhou cycas Microelectronics Co., Ltd.
Address: 1st floor,B06 building,No.2,Fuxing Road,Zhangjiagang Economic Development Zone,Jiangsu Province 215600PRC
光譜測量(Optical emission spectroscopy)
等離子阻抗監控(Plasma impedance monitoring)
The process of plasma system effect is transformed into the etching process of materials. On both sides of the silicon wafer to be etched, a glass splint of the same size as the silicon wafer shall be placed respectively, stacked neatly and clamped with a clamp to ensure that there is no large gap between the silicon wafer to be etched.
Cold and hot probe method
Cold and hot probe method
Put the fixture on the support of the reaction chamber stably, and close the cover of the reaction chamber.
The principle of plasma etching is the hot and cold probe method. The specific method is as follows:
When the hot probe contacts the n-type semiconductor, the conduction electrons will flow to the lower temperature area, making the electrons at the hot probe lack, so its potential will be positive relative to the room temperature contact on the same material.
Similarly, the p-type semiconductor thermal probe contact will be negative relative to the room temperature contact.
This potential difference can be measured with a simple microvolt meter.
The structure of the hot probe can be a small hot wire around a probe or a small electric soldering iron.
The measurement and control of plasma etching in this section are not easy to measure due to the process variables in the plasma etching process, such as etching rate, air pressure, temperature, plasma impedance, etc., so the commonly used. Measurement methods in the industry are
Optical emission spectroscopy,
Plasma impedance monitoring
The common control methods of remote coupled sensing (remote coupled sensing) folding plasma etching process are
Run to Run control (R2R)
Model predictive control (MPC)
Artificial neural network control
Folding plasma etching inspection operation and judgment.
Confirm that the multimeter works normally and the measuring range is set at 200mV.
The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter.
Use cold and hot probes to contact two points on one edge of the silicon wafer that are not connected. The voltmeter shows that the voltage between the two points is positive, indicating that the conductive type is p-type, and the etching is qualified. The same method is used to detect whether the conductive type of the other three edges is p-type.
If any edge is not etched as qualified after inspection, this batch of silicon wafers need to be reloaded for etching.