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等離子刻蝕工藝--裝片Plasma etching process -- chip loading

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等離子刻蝕工藝--裝片Plasma etching process -- chip loading

發布日期:2018-03-17 作者:www.tonertimes.com 點擊:

等離子體係統效應的過程轉換成材料的蝕刻工藝。在待刻蝕矽片的兩邊,分別放置一片與矽片同樣大小的玻璃夾板,疊放整齊,用夾具夾緊,確保待刻蝕的矽片中間沒有大的縫隙。

冷熱探針法

冷熱探針法

將夾具平穩放入反應室的支架上,關好反應室的蓋子。


等離子刻蝕檢驗原理為冷熱探針法,具體方法如下:


熱探針和N型半導體接觸時,傳導電子將流向溫度較低的區域,使得熱探針處電子缺少,因而其電勢相對於同一材料上的室溫觸點而言將是正的。

等離子刻蝕機

同樣道理,P型半導體熱探針觸點相對於室溫觸點而言將是負的。


此電勢差可以用簡單的微伏表測量。


熱探針的結構可以是將小的熱線圈繞在一個探針的周圍,也可以用小型的電烙鐵。


折疊編輯本段等離子刻蝕的測量與控製


由於等離子刻蝕機工藝中的過程變量,如刻蝕率、氣壓、溫度、等離子阻抗,等等,不易測量,


折疊因此業界常用的測量方法有

虛擬測量(Virtual Metrology)

光譜測量(Optical emission spectroscopy)

等離子阻抗監控(Plasma impedance monitoring)

終端探測(end-point detection)

遠程耦合傳感(remote-coupled sensing)


折疊等離子刻蝕過程的常見控製方法有

run-to-run 控製(R2R)

模型預測控製(MPC)

人工神經網絡控製


折疊等離子刻蝕檢驗操作及判斷

1. 確認萬用表工作正常,量程置於200mV。

2.冷探針連接電壓表的正電極,熱探針與電壓表的負極相連。

3.用冷、熱探針接觸矽片一個邊沿不相連的兩個點,電壓表顯示這兩點間的電壓為正值,說明導電類型為P 型,刻蝕合格。相同的方法檢測另外三個邊沿的導電類型是否為P型。

4.如果經過檢驗,任何一個邊沿沒有刻蝕合格,則這一批矽片需要重新裝片,進行刻蝕。

    The process of plasma system effect is transformed into the etching process of materials. On both sides of the silicon wafer to be etched, a glass splint of the same size as the silicon wafer shall be placed respectively, stacked neatly and clamped with a clamp to ensure that there is no large gap between the silicon wafer to be etched.

   Cold and hot probe method

   Cold and hot probe method 

   Put the fixture on the support of the reaction chamber stably, and close the cover of the reaction chamber. 

   The principle of plasma etching is the hot and cold probe method. The specific method is as follows: 

   When the hot probe contacts the n-type semiconductor, the conduction electrons will flow to the lower temperature area, making the electrons at the hot probe lack, so its potential will be positive relative to the room temperature contact on the same material. 

   Similarly, the p-type semiconductor thermal probe contact will be negative relative to the room temperature contact. 

   This potential difference can be measured with a simple microvolt meter. 

   The structure of the hot probe can be a small hot wire around a probe or a small electric soldering iron. 

   The measurement and control of plasma etching in this section are not easy to measure due to the process variables in the               plasma etching process, such as etching rate, air pressure, temperature, plasma impedance, etc., so the commonly used.                   Measurement methods in the industry are 

   Virtual measurement, 

   Optical emission spectroscopy, 

   Plasma impedance monitoring 

   End-point detection

   Remote-coupled sensing

   The common control methods of remote coupled sensing (remote coupled sensing) folding plasma etching process are 

   Run to Run control (R2R) 

   Model predictive control (MPC) 

   Artificial neural network control 

   Folding plasma etching inspection operation and judgment. 

  1. Confirm that the multimeter works normally and the measuring range is set at 200mV.

  2. The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter.

  3. Use cold and hot probes to contact two points on one edge of the silicon wafer that are not connected. The voltmeter shows that the voltage between the two points is positive, indicating that the conductive type is p-type, and the etching is qualified. The same method is used to detect whether the conductive type of the other three edges is p-type.

  4. If any edge is not etched as qualified after inspection, this batch of silicon wafers need to be reloaded for etching.


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