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Is plasma etching (dry etching) and plasma cleaning one thing等離子蝕刻機(幹刻)與等離子清洗機是一件事嗎

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Is plasma etching (dry etching) and plasma cleaning one thing等離子蝕刻機(幹刻)與等離子清洗機是一件事嗎

發布日期:2018-01-04 作者:www.tonertimes.com 點擊:

等離子刻蝕機主要采用射頻等離子源(也有采用微波離子源)激發反應氣體產生等氣體離子對目標物進行物理轟擊,以達到去除指定物質手段。因為反應力度要求較大,所以等離子刻蝕機基本是采用RF射頻等離子發生方式。同理,如果控製等離子源功率和其他相關參數可以降低反應力度,從而也可以對一般電子元件進行清洗去除汙染物。從這層作用來講他們可以共用。


但是在半導體生產過程中,刻蝕和清洗兩個工作步驟往往分開的,不共用同一套設備。為了避免物理轟擊對元件成型電路帶來不可預知的損傷,現在等離子清洗機主流逐漸采用微波等離子清洗機(可百度搜索)了。它的優勢是表麵電子能比RF少2個數量級,因此可以說對目標物能達到無損。

The plasma etcher mainly uses the RF plasma source (or microwave ion source) to excite the reaction gas and other gas ions to physically bombard the target, so as to achieve the removal of designated substances. Because of the great demand of reaction force, RF plasma is basically used in plasma etcher. In the same way, if the power of plasma source and other relevant parameters are controlled, the reaction strength can be reduced, so that the general electronic components can also be cleaned to remove pollutants. From this perspective, they can share.

However, in the process of semiconductor production, etching and cleaning are often separated and do not share the same set of equipment. In order to avoid the unpredictable damage caused by physical bombardment to the component forming circuit, now the mainstream of plasma cleaning machine gradually uses microwave plasma cleaning machine (Baidu search). Its advantage is that the surface electron energy is less than RF by two orders of magnitude, so it can be said to be lossless to the target.

等離子刻蝕機

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相關標簽:等離子刻蝕機

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