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Technical characteristics of rie-pe etcher and some data analysisRIE-PE刻蝕機技術性的特點以及一些資料分析

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Technical characteristics of rie-pe etcher and some data analysisRIE-PE刻蝕機技術性的特點以及一些資料分析

發布日期:2018-01-05 作者:www.tonertimes.com 點擊:

在眾多半導體工藝中,刻蝕是決定特征尺寸的核心工藝技術之一。刻蝕分為濕法刻蝕和幹法刻蝕。濕法刻蝕采用化學腐蝕進行,是傳統的刻蝕工藝。它具有各向同性的缺點,即在刻蝕過程中不但有所需要的縱向刻蝕,也有不需要的橫向刻蝕,因而精度差,線寬一般在3um以上。RIE-PE刻蝕機是因大規模集成電路生產的需要而開發的精細加工技術,它具有各向異性特點,在Z大限度上保證了縱向刻蝕,還可以控製橫向刻蝕。介紹的RIE-PE刻蝕機就是屬於幹法ICP刻蝕係統。

    RIE-PE等離子刻蝕機為了適應工藝發展需求,各家設備廠商都推出了一係列的關鍵技術來滿足工藝需求。主要有以下幾類;

    2、等離子體技術:等離子體密度和能量單獨控製。

    3、等離子體約束:減少Particle,提高結果重複性。

    4、工藝組件:適應不同工藝需求,對應不同的工藝組件,比如不同的工藝使用不同。

    1、雙區進氣的目的是通過調節內外區敏感氣體的量提高整個刻蝕均一性,結果比較明顯。

    6、反應室結構設計;由200mm時的側抽,改為下抽或者側下抽。有利於提高氣流均一性。

    5、 Narrow Gap:窄的Gap設計可以使得電子穿過殼層,中和晶圓上多餘的離子,有利於提高刻蝕剖麵陡直度。

等離子刻蝕機

    RIE-PE刻蝕機特點:

    1、高選擇性各向異性腐蝕,符合苛刻的製程要求。

    2、全自動"一鍵"操作完全代替手動操作。

    3、易於使用的電腦觸摸屏的參數控製和配方輸入和存儲。

    4、晶圓尺寸達8"英寸直徑,圓滑、緊湊的設計使用Z少的潔淨室空間。

    5、RIE-PE刻蝕機設計用於蝕刻氮化物、氧化物和任意需要氟基化學的薄膜或基片。其安裝在節省空間的平台上的模塊化設計,使其成為全世界許多用戶的首選係統。

    6、高級選項:ICP(電感耦合等離子)、渦淪泵、帶背側氦冷卻係統和端點檢測係統的靜電吸盤等。

    7、產品已全麵開發出各種工藝,RIE-PE刻蝕機用於對使用氟基化學的材料進行各向同性和各向異性蝕刻,其中包括:碳、環氧樹脂、石墨、銦、鉬、氮氧化物、光阻劑、聚酰亞胺、石英、矽、氧化物、氮化物、鉭、氮化鉭、氮化鈦、鎢鈦以及鎢。

    In many semiconductor processes, etching is one of the key technologies to determine the feature size. Etching can be divided into wet etching and dry etching. Wet etching is a traditional etching process, which is carried out by chemical etching. It has the disadvantage of isotropy, that is, in the etching process, there are not only longitudinal etching but also transverse etching, so the accuracy is poor, and the linewidth is generally more than 3um. Rie-pe etching machine is a fine machining technology developed for the needs of large-scale integrated circuit production. It has anisotropic characteristics, which ensures the maximum longitudinal etching and can also control the transverse etching. The rie-pe etching machine is a dry ICP etching system. 

    In order to meet the needs of process development, various equipment manufacturers have introduced a series of key technologies to meet the process requirements. There are mainly the following categories: 

2. Plasma technology: plasma density and energy are controlled separately. 

3. Plasma confinement: reduce the number of particles and improve the repeatability of results. 

4. Process components: adapt to different process requirements, corresponding to different process components, for example, different processes are used differently. 

1.The purpose of dual zone air intake is to improve the whole etching uniformity by adjusting the amount of sensitive gas in the inner and outer zone, and the results are obvious.

6. Structural design of reaction chamber: from side pumping at 200mm to down pumping or side down pumping. It is beneficial to improve the uniformity of air flow. 

5. Narrow gap: the narrow gap design can make electrons pass through the shell, neutralize the extra ions on the wafer, and improve the etching profile steepness. 

Rie-pe etching machine features: 

   1. High selective anisotropic etching, in line with the stringent process requirements.

   2. Fully automatic "one key" operation completely replaces manual operation. 

   3. Easy to use computer touch screen parameter control and formula input and storage. 

   4. Wafer size up to 8 "inch diameter, sleek and compact design with minimum clean room space. 

   5. The rie-pe etching machine is designed to etch nitrides, oxides and any film or substrate requiring fluorochemistry. Its modular design, which is installed on a space saving platform, makes it the preferred system for many users around the world. 

   6. Advanced options: ICP (inductively coupled plasma), vortex pump, electrostatic suction cup with back helium cooling system and endpoint detection system, etc. 

   7. Various processes have been developed for the products. Rie-pe etching machine is used for isotropic and anisotropic etching of materials using fluorine-based chemistry, including carbon, epoxy resin, graphite, indium, molybdenum, nitrogen oxide, photoresist, polyimide, quartz, silicon, oxide, nitride, tantalum, tantalum nitride, titanium nitride, tungsten titanium and tungsten.


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