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刻蝕的具體過程可描述幾個步驟?How many steps can be described in the etching process?

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刻蝕的具體過程可描述幾個步驟?How many steps can be described in the etching process?

發布日期:2018-02-01 作者:www.tonertimes.com/ 點擊:

當刻蝕氣體被通入刻蝕反應腔中,在射頻電場的作用下產生等離子體輝光放電,反應氣體分解成各種中性的化學活性基團,分子、電子、離子;由於電子和離子的質量不同使得質量較輕的電子能夠響應射頻電場的變化而離子卻不能,正是這種差異在電極上產生負偏壓 Vdc(Negative DC bias) ,離子在負偏壓的加速下轟擊矽片表麵形成反應離子刻蝕;一個持續的幹法刻蝕必須要滿足這些條件:在反應腔內有源源不斷的自由基團;矽片必須靠等離子體足夠近以便反應基團可以擴散到其表麵;反應物應被矽片表麵吸附以持續化學反應;揮發性的生成物應可從矽片表麵解吸附並被抽出反應腔。上麵的任一種條件末達到刻蝕過程都會中斷。等離子刻蝕機刻蝕的具體過程可描述為如下六個步驟:

1. 刻蝕物質的產生;

射頻電源施加在一個充滿刻蝕 氣體的反應腔上,通過等離子體輝光放電產生電子、離子、活性反應基團。

2. 刻蝕物質向矽片表麵擴散;

3. 刻蝕物質吸附在矽片表麵上;

4. 在離子轟擊下刻蝕物質和矽片表麵被刻蝕材料發生反應;

5. 刻蝕反應副產物在離子轟擊下解吸附離開矽片表麵;

6. 揮發性刻蝕副產物和其它未參加反應的物質被真空泵抽出反應腔;

等離子刻蝕機

整個過程中有諸多的參數影響刻蝕工藝,其中Z重要的是:壓力、氣體比率、氣體流速、射頻電源(RF POWER)。另外矽片的位置和刻蝕設備的結構也會對刻蝕工藝,因此在實際生產中,針對不同的刻蝕膜質設備廠家設計不同的設備,提供不同的氣體配比以達到工藝要求

    When the etching gas is introduced into the etching reaction chamber, a plasma glow discharge is generated under the action of RF electric field, and the reaction gas is decomposed into various neutral chemical active groups, molecules, electrons and ions; because of the different mass of electrons and ions, the lighter electrons can respond to the change of RF electric field, while the ions cannot, which is the difference that produces negative bias on the electrode Voltage VDC (negative DC bias) Under the acceleration of negative bias voltage, ions bombard the surface of silicon wafer to form reactive ion etching; a continuous dry etching must meet these conditions: there are continuous free groups in the reaction chamber; silicon wafer must be close enough to the plasma so that the reactive groups can diffuse to its surface; reactants should be adsorbed on the surface of silicon wafer for continuous chemical reaction; volatile products should be able to Desorption from the wafer surface and extraction of the reaction chamber. Any of the above conditions will interrupt the etching process. The specific process of plasma etching can be described as follows: 

  1. The generation of etching materials; RF power supply is applied to a reaction chamber full of etching gas, through the glow discharge of plasma to produce electrons, ions, active reaction groups.

  2. The etching substance diffuses to the surface of silicon wafer;

  3. The etching substance is adsorbed on the surface of silicon wafer;

  4. The etching substance reacts with the etched material on the surface of silicon wafer under the ion bombardment;

  5. The by-product of etching reaction is desorbed from the surface of silicon wafer under the ion bombardment;

   6. The volatile etching byproducts and other substances not involved in the reaction are pumped out of the reaction chamber by vacuum pump; 

     There are many parameters affecting the etching process in the whole process, the most important of which are: pressure, gas ratio, gas flow rate, RF power. In addition, the locations of silicon wafer and the structure of etching equipment will also affect the etching process. Therefore, in actual production, different equipment and gas ratio are designed for different etching film equipment manufacturers to meet the process requirements

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相關標簽:等離子刻蝕機

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