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Measurement and control of plasma etching in plasma etcher等離子刻蝕機的等離子刻蝕的測量與控製

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Measurement and control of plasma etching in plasma etcher等離子刻蝕機的等離子刻蝕的測量與控製

發布日期:2018-02-01 作者:www.tonertimes.com 點擊:

由於等離子刻蝕機工藝中的過程變量,如刻蝕率、氣壓、溫度、等離子阻抗,等等,不易測量, 虛擬測量(Virtual Metrology)

光譜測量(Optical emission spectroscopy)

等離子阻抗監控(Plasma impedance monitoring)

終端探測(end-point detection)

遠程耦合傳感(remote-coupled sensing) run-to-run 控製(R2R)

模型預測控製(MPC)

人工神經網絡控製 1. 確認萬用表工作正常,量程置於200mV。

2.冷探針連接電壓表的正電極,熱探針與電壓表的負極相連。

3.用冷、熱探針接觸矽片一個邊沿不相連的兩個點,電壓表顯示這兩點間的電壓為正值,說明導電類型為P 型,刻蝕合格。相同的方法檢測另外三個邊沿的導電類型是否為P型。

4.如果經過檢驗,任何一個邊沿沒有刻蝕合格,則這一批矽片需要重新裝片,進行刻蝕。

Because of the process variables in the process of plasma etching, such as etching rate, air pressure, temperature, plasma impedance, etc., it is not easy to measure. Virtual measurement, 

Optical emission spectroscopy, 

Plasma impedance monitoring, 

end-point detection, 

remote coupled sensing Run to run control (R2R) model predictive control (

MPC) artificial neural network control 1. Confirm that the multimeter works normally and the range is set at 200mV. 

2. The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter. 

3. Use cold and hot probes to contact two points on one edge of the silicon wafer that are not connected. The voltmeter shows that the voltage between the two points is positive, indicating that the conductive type is p-type, and the etching is qualified. The same method is used to detect whether the conductive type of the other three edges is p-type. 

4. If any edge is not etched as qualified after inspection, this batch of silicon wafers need to be reloaded for etching.

等離子刻蝕機

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相關標簽:等離子刻蝕機

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