Name: Suzhou cycas Microelectronics Co., Ltd.
Address: 1st floor,B06 building,No.2,Fuxing Road,Zhangjiagang Economic Development Zone,Jiangsu Province 215600PRC
感應耦合等離子刻蝕機（Inductively CoupledPlasma Etch，簡稱ICPE）是化學過程和物理過程共同作用的結果。它的基本原理是在真空低氣壓下，ICP 射頻電源產生的射頻輸出到環形耦合線圈，以一定比例的混合刻蝕氣體經耦合輝光放電，產生高密度的等離子體，在下電極的RF 射頻作用下，這些等離子體對基片表麵進行轟擊，基片圖形區域的半導體材料的化學鍵被打斷，與刻蝕氣體生成揮發性物質，以氣體形式脫離基片，從真空管路被抽走。
刻蝕腔體是ICP 刻蝕設備的核心結構，它對刻蝕速率、刻蝕的垂直度以及粗糙度都有直接的影響。刻蝕腔的主要組成有：上電極、ICP 射頻單元、RF 射頻單元、下電極係統、控溫係統等組成。
Inductively coupled plasma etch (ICPE) is the result of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged by coupling glow discharge to produce high-density plasma, RF at the lower electrode Under RF, these plasmas bombard the surface of the substrate. The chemical bond of the semiconductor material in the pattern area of the substrate is interrupted, and volatile substances are generated with the etching gas, which is separated from the substrate in the form of gas, and then pumped out from the vacuum pipeline.
The structural ICP equipment consists of four parts: pre vacuum chamber, etch chamber, air supply system and vacuum system.
(1) The function of the pre vacuum chamber is to ensure that the etching chamber is maintained in the set vacuum degree, and is not affected by the external environment (such as dust and water vapor), so as to separate the dangerous gas from the clean workshop. It consists of cover plate, manipulator, transmission mechanism, isolation door, etc
(2) Etching cavity is the core structure of ICP etching equipment, which has a direct impact on etching rate, perpendicularity and roughness. The main components of the etching chamber are: upper electrode, ICP RF unit, RF RF unit, lower electrode system, temperature control system, etc.
(3) The gas supply system of the gas supply system is to deliver various etching gases to the etching cavity, and precisely control the gas flow rate and flow rate through the pressure controller (PC) and the mass flow controller (MFC). The gas supply system consists of gas source bottle, gas transmission pipeline, control system, mixing unit, etc.
(4) There are two sets of vacuum system in vacuum system, which are used for pre vacuum chamber and etching chamber respectively. The pre vacuum chamber is vacuumized by a mechanical pump. Only when the vacuum degree of the pre vacuum chamber reaches the set value, can the isolation door be opened and the transfer piece be carried out. The vacuum of etching cavity is provided by mechanical pump and molecular pump, and the gas generated by the reaction of etching cavity is also drained by vacuum system.