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感應耦合等離子體刻蝕機結構Structure of inductively coupled plasma etcher

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感應耦合等離子體刻蝕機結構Structure of inductively coupled plasma etcher

發布日期:2018-06-09 作者:www.tonertimes.com 點擊:

感應耦合等離子刻蝕機(Inductively CoupledPlasma Etch,簡稱ICPE)是化學過程和物理過程共同作用的結果。它的基本原理是在真空低氣壓下,ICP 射頻電源產生的射頻輸出到環形耦合線圈,以一定比例的混合刻蝕氣體經耦合輝光放電,產生高密度的等離子體,在下電極的RF 射頻作用下,這些等離子體對基片表麵進行轟擊,基片圖形區域的半導體材料的化學鍵被打斷,與刻蝕氣體生成揮發性物質,以氣體形式脫離基片,從真空管路被抽走。

等離子刻蝕機

結構

ICP 設備主要包括預真空室、刻蝕腔、供氣係統和真空係統四部分。

(1)預真空室

預真空室的作用是確保刻蝕腔內維持在設定的真空度,不受外界環境(如:粉塵、水汽)的影響,將危險性氣體與潔淨廠房隔離開來。它由蓋板、機械手、傳動機構、隔離門等組成。

(2)刻蝕腔體

刻蝕腔體是ICP 刻蝕設備的核心結構,它對刻蝕速率、刻蝕的垂直度以及粗糙度都有直接的影響。刻蝕腔的主要組成有:上電極、ICP 射頻單元、RF 射頻單元、下電極係統、控溫係統等組成。

(3)供氣係統

供氣係統是向刻蝕腔體輸送各種刻蝕氣體,通過壓力控製器(PC)和質量流量控製器(MFC)精準的控製氣體的流速和流量。氣體供應係統由氣源瓶、氣體輸送管道、控製係統、混合單元等組成。

(4)真空係統

真空係統有兩套,分別用於預真空室和刻蝕腔體。預真空室由機械泵單獨抽真空,隻有在預真空室真空度達到設定值時,才能打開隔離門,進行傳送片。刻蝕腔體的真空由機械泵和分子泵共同提供,刻蝕腔體反應生成的氣體也由真空係統排空

    Inductively coupled plasma etch (ICPE) is the result of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged by coupling glow discharge to produce high-density plasma, RF at the lower electrode Under RF, these plasmas bombard the surface of the substrate. The chemical bond of the semiconductor material in the pattern area of the substrate is interrupted, and volatile substances are generated with the etching gas, which is separated from the substrate in the form of gas, and then pumped out from the vacuum pipeline.

    The structural ICP equipment consists of four parts: pre vacuum chamber, etch chamber, air supply system and vacuum system.

    (1) The function of the pre vacuum chamber is to ensure that the etching chamber is maintained in the set vacuum degree, and is not affected by the external environment (such as dust and water vapor), so as to separate the dangerous gas from the clean workshop. It consists of cover plate, manipulator, transmission mechanism, isolation door, etc

   (2) Etching cavity is the core structure of ICP etching equipment, which has a direct impact on etching rate, perpendicularity and roughness. The main components of the etching chamber are: upper electrode, ICP RF unit, RF RF unit, lower electrode system, temperature control system, etc.

   (3) The gas supply system of the gas supply system is to deliver various etching gases to the etching cavity, and precisely control the gas flow rate and flow rate through the pressure controller (PC) and the mass flow controller (MFC). The gas supply system consists of gas source bottle, gas transmission pipeline, control system, mixing unit, etc.

   (4) There are two sets of vacuum system in vacuum system, which are used for pre vacuum chamber and etching chamber respectively. The pre vacuum chamber is vacuumized by a mechanical pump. Only when the vacuum degree of the pre vacuum chamber reaches the set value, can the isolation door be opened and the transfer piece be carried out. The vacuum of etching cavity is provided by mechanical pump and molecular pump, and the gas generated by the reaction of etching cavity is also drained by vacuum system.


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