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帶RIE等離子刻蝕機處理模式介紹The introduction of processing mode of plasma etching machine with RIE

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帶RIE等離子刻蝕機處理模式介紹The introduction of processing mode of plasma etching machine with RIE

發布日期:2018-09-30 作者:www.tonertimes.com 點擊:

  帶RIE等離子刻蝕機是幹法刻蝕中zui常見的一種形式,其原理是暴露在電子區域的氣體形成等離子體,由此產生的電離氣體和釋放高能電子組成的氣體,從而形成了等離子或離子,電離氣體原子通過電場加速時,會釋放足夠的力量與表麵驅逐力緊緊粘合材料或蝕刻表麵。某種程度來講,等離子清洗實質上是等離子體刻蝕的一種較輕微的情況。進行幹式蝕刻工藝的設備包括反應室、電源、真空部分。工件送入被真空泵抽空的反應室。氣體被導入並與等離子體進行交換。等離子體在工件表麵發生反應,反應的揮發性副產物被真空泵抽走。等離子體刻蝕工藝實際上便是一種反應性等離子工藝。

  

帶RIE等離子刻蝕機處理模式:

  直接模式——基片可以直接放置在電極托架或是底座托架上,以獲得zui大的平麵刻蝕效果。

  定向模式——需要非等向性刻蝕(anisotropic etching)的基片可以放置在特製的平麵托架上。

  下遊模式——基片可以放置在不帶電托架上,以便取得微小的等離子體效果。

  定製模式——當平麵刻蝕配置不過理想時,特製的電極配置可以提供。

  

等離子刻蝕機


濕法刻蝕相對於帶RIE等離子刻蝕機的缺點

  1. 矽片水平運行,機片高(等離子刻蝕去PSG槽式浸泡甩幹,矽片受衝擊小);

  2. 下料吸筆易汙染矽片(等離子刻蝕去PSG後甩幹);

  3. 傳動滾抽易變形(PVDF,PP材質且水平放置易變形);

  4. 成本高(化學品刻蝕代替等離子刻蝕成本增加)。

  此外,有些等離子刻蝕機,如SCE等離子刻蝕機還具備“綠色”優勢:無氟氯化碳和汙水、操作和環境安全、排除有毒和腐蝕性的液體。

  

帶RIE等離子刻蝕機檢驗操作及判斷

  1. 確認萬用表工作正常,量程置於200mV。

  2.冷探針連接電壓表的正電極,熱探針與電壓表的負極相連。

  3.用冷、熱探針接觸矽片一個邊沿不相連的兩個點,電壓表顯示這兩點間的電壓為正值,說明導電類型為P 型,刻蝕合格。相同的方法檢測另外三個邊沿的導電類型是否為P型。

  4.如果經過檢驗,任何一個邊沿沒有刻蝕合格,則這一批矽片需要重新裝片,進行刻蝕。

    RIE plasma etcher is a common form of Zui in dry etching. Its principle is that the gas exposed to the electronic area forms plasma, which produces ionized gas and releases gas composed of high-energy electrons, thus forming plasma or ion. When the ionized gas atom is accelerated by electric field, it will release enough force to tightly bond the material or etching table with the surface expulsion force Noodles. To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching is actually a reactive plasma process.

Processing mode with RIE plasma etching machine: 

direct mode - the substrate can be directly placed on the electrode bracket or the base bracket, so as to obtain the large plane etching effect of Zui. 

Orientation mode - substrate requiring anisotropic etching can be placed on a special plane bracket.

Downstream mode - the substrate can be placed on an uncharged bracket to achieve a small plasma effect. 

Custom mode - when the planar etching configuration is not ideal, a special electrode configuration can be provided.

The disadvantages of wet etching compared with RIE plasma etching machine are: 

  1. The silicon wafer runs horizontally, with high chip height (plasma etching to PSG bath soaking and drying, and the silicon wafer has little impact); 

  2. The silicon wafer is easy to be polluted by the blanking pen (plasma etching to PSG and then drying);

  3. The transmission roll drawing is easy to deform (PVDF, PP material and placed horizontally); 

  4. High cost (the cost of chemical etching instead of plasma etching increases). In addition, some plasma etchers, such as SCE plasma etchers, also have "green"advantages: no CFC and sewage, safe operation and environment, toxic and corrosive liquids are eliminated.

With RIE plasma etcher inspection operation and judgment

  1. Confirm that the multimeter works normally, and the range is set at 200mV.

  2. The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter. 

  3. Use cold and hot probes to contact two points on one edge of the silicon wafer that are not connected. The voltmeter shows that the voltage between the two points is positive, indicating that the conductive type is p-type, and the etching is qualified. The same method is used to detect whether the conductive type of the other three edges is p-type.

  4.  If any edge is not etched as qualified after inspection, this batch of silicon wafers need to be reloaded for etching.

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相關標簽:等離子刻蝕機

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