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In the plasma degumming machine, what is the main gas that plays a degumming role?在等離子去膠機中主要起到去膠作用的氣體是什麽?

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In the plasma degumming machine, what is the main gas that plays a degumming role?在等離子去膠機中主要起到去膠作用的氣體是什麽?

發布日期:2019-04-13 作者:www.tonertimes.com 點擊:

  小型等離子幹法去膠機與其他普通去膠機相比,體積更小、性能優良、用途廣泛、效率高、價格低、使用方便。除此之外,小型等離子去膠機還具有十分優秀的均勻性和重複性,因此在各個科研單位和企業中都有十分廣泛的應用,而且除了可以進行RIE刻蝕之外,還可以進行矽、二氧化矽、氮化矽等的蝕刻操作。

  在等離子去膠機中主要起到去膠作用的氣體為氧氣,在進行去膠操作時,隻需要將矽片放置到真空反應係統中,通入少量氧氣,並加上1500伏特的高壓,再由高頻信號發生器發出高頻信號,使得石英管內形成一個強電磁場,使氧氣發生電離之後形成陽離子以及活化的陽原子和氧分子以及電子的混合物等離子體的輝光柱。其中的活潑氧原子可以迅速的將聚酰亞胺膜進行氧化,並生成可揮發性氣體,並被機械泵出走,這樣就可以將矽片上的聚酰亞胺膜清除了。

等離子刻蝕機

  采用等離子去膠機進行去膠操作十分的簡單,並且效率高,去膠後的表麵幹淨光潔、沒有任何的劃痕、成本低、環保。電介質等離子體去膠機在進行刻蝕時,一般會被應用在電容耦合等離子體平行板反應器上,在平行板反應器中,反應離子刻蝕腔體所采用的是陰極麵積小,陽極麵積大的不對稱設計,而需要被刻蝕的物件則是被放置到麵積較小的電極之上。

  等離子去膠機在進行刻蝕操作時,其射頻電源所產生的熱運動會使質量小、運動速度快的帶負電自由電子很快到達陰極,而正離子則是由於質量大、速度慢而很難在同一時刻達到陰極,從而就會在陰極附近形成帶負電的鞘層,正離子在這個鞘層的加速之下,就會垂直的轟擊在矽片的表麵,從而使得表麵的化學反應加快,並且會使得反應生成物脫離,因此其刻蝕速度極快,離子的轟擊也會使各向異性刻蝕得以實現。

      Compared with other ordinary degumming machines, the small plasma dry degumming machine has smaller volume, better performance, wide use, high efficiency, low price and convenient use. In addition, the small plasma degummer also has excellent uniformity and repeatability, so it is widely used in various scientific research institutions and enterprises. Besides RIE etching, it can also be used for etching silicon, silicon dioxide, silicon nitride, etc. 

     In the plasma degumming machine, oxygen is the main gas that plays the role of degumming. In the degumming operation, it is only necessary to place the silicon wafer in the vacuum reaction system, introduce a small amount of oxygen, and add a high pressure of 1500 volts, then the high frequency signal is sent out by the high frequency signal generator, so that a strong electromagnetic field is formed in the quartz tube, after the oxygen is ionized, cation and activated are formed A glow column for a plasma of mixtures of positive atoms and oxygen molecules and electrons. The active oxygen atom can oxidize the polyimide film rapidly, generate volatile gas, and be pumped out mechanically, so that the polyimide film on the silicon wafer can be removed. 

   Using plasma degumming machine to degumme is very simple and efficient. After degumming, the surface is clean and clean without any scratch, low cost and environmental protection. Dielectric plasma degumming machine is generally used in the parallel plate reactor of capacitance coupled plasma. In the parallel plate reactor, the reactive ion etching chamber adopts the asymmetric design with small cathode area and large anode area, and the objects to be etched are placed on the electrode with small area. 

   During the etching operation of plasma degumming machine, the hot motion generated by the RF power supply will make the free electron with negative charge with small mass and fast moving speed reach the cathode quickly, while the positive ion is difficult to reach the cathode at the same time due to its large mass and slow moving speed, so a negative sheath will be formed near the cathode, and the positive ion will sag under the acceleration of this sheath The direct bombardment on the surface of silicon wafer will accelerate the chemical reaction on the surface and separate the reaction products, so the etching speed is very fast, and the ion bombardment will also realize the anisotropic etching.

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相關標簽:等離子刻蝕機

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