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Sputtering is to bombard the target surface with charged particles in vacuum濺射鍍膜就是在真空中利用荷能粒子轟擊靶表麵

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Sputtering is to bombard the target surface with charged particles in vacuum濺射鍍膜就是在真空中利用荷能粒子轟擊靶表麵

發布日期:2019-06-08 作者:www.tonertimes.com 點擊:

濺射鍍膜就是在真空中利用荷能粒子轟擊靶表麵,使被轟擊出的粒子沉積在基片上的技術。通常,利用低壓惰性氣體輝光放電來產生入射離子。陰極靶由鍍膜材料製成,基片作為陽極,真空室中通入0.1-10Pa的氬氣或其它惰性氣體,在陰極(靶)1-3KV直流負高壓或13.56MHz的射頻電壓作用下產生輝光放電。電離出的氬離子轟擊靶表麵,使得靶原子濺出並沉積在基片上,形成薄膜。濺射方法很多,主要有二級濺射、三級或四級濺射、磁控濺射、對靶濺射、射頻濺射、偏壓濺射、非對稱交流射頻濺射、離子束濺射以及反應濺射等。

由於被濺射原子是與具有數十電子伏特能量的正離子交換動能後飛濺出來的,因而濺射出來的原子能量高,有利於提高沉積時原子的擴散能力,提高沉積組織的致密程度,使製出的薄膜與基片具有強的附著力。

濺射時,氣體被電離之後,氣體離子在電場作用下飛向接陰極的靶材,電子則飛向接地的壁腔和基片。這樣在低電壓和低氣壓下,產生的離子數目少,靶材濺射效率低;而在高電壓和高氣壓下,盡管可以產生較多的離子,但飛向基片的電子攜帶的能量高,容易使基片發熱甚至發生二次濺射,影響製膜質量。另外,靶材原子在飛向基片的過程中與氣體分子的碰撞幾率也大為增加,因而被散射到整個腔體,既會造成靶材浪費,又會在製備多層膜時造成各層的汙染。

       Sputtering coating is a technology that bombards the target surface with charged particles in vacuum to deposit the bombarded particles on the substrate. Usually, the incident ions are produced by glow discharge of low pressure inert gas. The cathode target is made of coating material, the substrate is used as anode, and 0.1-10pa argon or other inert gas is introduced into the vacuum chamber to generate glow discharge under 1-3kv DC negative high voltage or 13.56MHz RF voltage of cathode (target). The ionized argon ions bombard the target surface, making the target atoms splash and deposit on the substrate, forming a thin film. There are many sputtering methods, including secondary sputtering, tertiary or quaternary sputtering, magnetron sputtering, target sputtering, RF sputtering, bias sputtering, asymmetric AC RF sputtering, ion beam sputtering and reactive sputtering. 

     Because the sputtered atoms are splashed out after exchanging kinetic energy with positive ions with tens of electron volts energy, the sputtered atoms have high energy, which is conducive to improving the diffusion ability of atoms during deposition, improving the density of deposited structure, and making the film and substrate have strong adhesion.

     During sputtering, after the gas is ionized, the gas ions fly to the cathode target under the action of electric field, and the electrons fly to the grounded wall cavity and substrate. In this way, under low voltage and low pressure, the number of ions produced is small, and the sputtering efficiency of the target is low; while under high voltage and high pressure, although more ions can be produced, the high energy carried by the electrons flying to the substrate is easy to heat the substrate or even cause secondary sputtering, which affects the film quality. In addition, the collision probability between the target atoms and the gas molecules increases greatly in the process of flying to the substrate, so it will be scattered to the whole cavity, which will not only cause the target waste, but also cause the pollution of each layer in the preparation of multilayer.

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