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等離子刻蝕技術  Plasma etching technology

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等離子刻蝕技術  Plasma etching technology

發布日期:2019-10-31 作者: 點擊:

等離子刻蝕技術

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等離子刻蝕機,又叫等離子蝕刻機、等離子平麵刻蝕機、等離子體刻蝕機、等離子表麵處理儀、等離子清洗係統等。等離子刻蝕,是幹法刻蝕中Z常見的一種形式,其原理是暴露在電子區域的氣體形成等離子體,由此產生的電離氣體和釋放高能電子組成的氣體,從而形成了等離子或離子,電離氣體原子通過電場加速時,會釋放足夠的力量與表麵驅逐力緊緊粘合材料或蝕刻表麵。某種程度來講,等離子清洗實質上是等離子體刻蝕的一種較輕微的情況。進行幹式蝕刻工藝的設備包括反應室、電源、真空部分。工件送入被真空泵抽空的反應室。氣體被導入並與等離子體進行交換。等離子體在工件表麵發生反應,反應的揮發性副產物被真空泵抽走。等離子體刻蝕工藝實際上便是一種反應性等離子工藝。近期的發展是在反應室的內部安裝成擱架形式,這種設計的是富有彈性的,用戶可以移去架子來配置合適的等離子體的蝕刻方法:反應性等離子體(RIE),順流等離子體(downstream),直接等離子體(direction plasma)。


原理


感應耦合等離子體刻蝕法(Inductively Coupled Plasma Etch,簡稱ICPE)是化學過程和物理過程共同作用的結果。它的基本原理是在真空低氣壓下,ICP 射頻電源產生的射頻輸出到環形耦合線圈,以一定比例的混合刻蝕氣體經耦合輝光放電,產生高密度的等離子體,在下電極的RF 射頻作用下,這些等離子體對基片表麵進行轟擊,基片圖形區域的半導體材料的化學鍵被打斷,與刻蝕氣體生成揮發性物質,以氣體形式脫離基片,從真空管路被抽走。


如果需要進行刻蝕,和蝕刻後,除汙,清除浮渣,表麵處理,等離子體聚合,等離子體灰化,或任何其他的蝕刻應用,91shipin能夠製造客戶完全信任的等離子處理係統,以滿足客戶的需要。91guochan既有常規的等離子體蝕刻係統,也有反應性離子蝕刻係統,91shipin可以製造係列的產品,也可以為客戶定製特殊的係統。91guochan可以提供快速/高品質的蝕刻,減輕等離子傷害,並提供無與倫比的均勻性。

 

等離子體處理可應用於所有的基材,甚至複雜的幾何構形都可以進行等離子體活化、等離子體清洗,等離子體鍍膜也毫無問題。等離子體處理時的熱負荷及機械負荷都很低,因此,低壓等離子體也能處理敏感性材料。

                                                                     Plasma etching technology

   Plasma etcher, also known as plasma etcher, plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc. Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electronic region forms plasma, resulting in ionized gas and the gas composed of high-energy electrons, thus forming plasma or ion. When the ionized gas atom accelerates through the electric field, it will release enough force to tightly bond the material or etching surface with the surface expulsion force. To some extent, plasma cleaning is actually a slight case of plasma etching. Equipment for dry etching process includes reaction chamber, power supply and vacuum part. The workpiece is sent to the reaction chamber which is evacuated by the vacuum pump. The gas is introduced and exchanged with the plasma. The plasma reacts on the surface of the workpiece, and the volatile by-products are pumped away by vacuum pump. Plasma etching is actually a reactive plasma process. The recent development is to install the reaction chamber in the form of a shelf. This kind of design is elastic. Users can remove the shelf to configure the appropriate etching methods of plasma: reactive plasma (RIE), downstream plasma (downstream), direct plasmon (direction plasma).

   

   Inductively coupled plasma etch (ICPE) is the result of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged by coupling glow discharge to produce high-density plasma, RF at the lower electrode Under RF, these plasmas bombard the surface of the substrate. The chemical bond of the semiconductor material in the pattern area of the substrate is interrupted, and volatile substances are generated with the etching gas, which is separated from the substrate in the form of gas, and then pumped out from the vacuum pipeline.


  If etching, and after etching, decontamination, scum removal, surface treatment, plasma polymerization, plasma ashing, or any other etching application is required, we can manufacture a plasma treatment system that customers fully trust to meet their needs. We have both conventional plasma etching system and reactive ion etching system. We can manufacture a series of products, or customize special systems for customers. We can provide fast / high quality etching, reduce plasma damage and provide unparalleled uniformity. 


  Plasma treatment can be applied to all substrates, even complex geometry can be plasma activated, plasma cleaning, plasma coating is no problem. The heat load and mechanical load of plasma treatment are very low, so low pressure plasma can also treat sensitive materials.


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