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等離子刻蝕機的檢驗操作及處理模式    Inspection operation and treatment mode of plasma etcher

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等離子刻蝕機的檢驗操作及處理模式    Inspection operation and treatment mode of plasma etcher

發布日期:2019-11-28 作者: 點擊:

等離子刻蝕機的檢驗操作及處理模式

TIM圖片20191128104055.png

  等離子刻蝕機的原理是在真空狀態下,利用射頻輻射使得氧、氬、氮、四氟化碳等氣體生成具有高反應活性的離子與器件等反應形成揮發性化合物,然後由真空係統獎這些揮發性物質清除出去。

  

    一、等離子刻蝕機檢驗操作及判斷

  1.確認萬用表工作正常,量程置於200mV。

  2.冷探針連接電壓表的正電極,熱探針與電壓表的負極相連。

  3.用冷、熱探針接觸矽片一個邊沿不相連的兩個點,電壓表顯示這兩點間的電壓為正值,說明導電類型為P型,刻蝕合格。相同的方法檢測另外三個邊沿的導電類型是否為P型。

  4.如果經過檢驗,任何一個邊沿沒有刻蝕合格,則這一批矽片需要重新裝片,進行刻蝕。

  

    二、等離子刻蝕機處理模式:

  直接模式——基片可以直接放置在電極托架或是底座托架上,以獲得zui大的平麵刻蝕效果。

  定向模式——需要非等向性刻蝕(anisotropicetching)的基片可以放置在特製的平麵托架上。

  下遊模式——基片可以放置在不帶電托架上,以便取得微小的等離子體效果。

  定製模式——當平麵刻蝕配置不過理想時,特製的電極配置可以提供。


 

                                           Inspection operation and treatment mode of plasma etcher

  The principle of plasma etcher is that in vacuum, oxygen, argon, nitrogen, carbon tetrafluoride and other gases are generated into highly reactive ions by radio-frequency radiation, which react with devices to form volatile compounds, which are then removed by vacuum system award.

1Inspection operation and judgment of plasma etcher

1. Confirm that the multimeter works normally and the range is set at 200mV.

2. The cold probe is connected to the positive electrode of the voltmeter, and the hot probe is connected to the negative electrode of the voltmeter.

3. Use cold and hot probes to contact two points on one edge of the silicon wafer that are not connected. The voltmeter shows that the voltage between the two points is positive, indicating that the conductive type is p-type, and the etching is qualified. The same method is used to detect whether the conductive type of the other three edges is p-type.

4. If any edge is not etched as qualified after inspection, this batch of silicon wafers need to be reloaded for etching.

2 Plasma etcher processing mode:

Direct mode - the substrate can be placed directly on the electrode bracket or the base bracket to achieve a large Zui planar etching effect.

Orientation mode - substrate requiring anisotropic etching can be placed on a special plane bracket.

Downstream mode - the substrate can be placed on an uncharged bracket to achieve a small plasma effect.

Custom mode - when the planar etching configuration is not ideal, a special electrode configuration can be provided.


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